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HiPerFET TM Power MOSFETs
ISOPLUS247 , Q-Class
IXFR 80N20Q
TM
(Electrically Isolated Back Surface)
V DSS
I D25
R DS(on)
= 200 V
= 71 A
= 28m W
N-Channel Enhancement Mode
Avalanche Rated
Low Q g , High dv/dt
Preliminary data
t rr ￡ 200 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 247 TM
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
Continuous
200
200
± 20
V
V
V
E153432
V GSM
I D25
I DM
I AR
E AR
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 30
71
320
80
45
V
A
A
A
mJ
G
G = Gate
S = Source
D
D = Drain
TAB = Drain
E AS
1.5
J
dv/dt
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
5
V/ns
P D
T J
T JM
T stg
T L
M d
Weight
T C = 25 ° C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
310
-55 ... +150
150
-55 ... +150
300
1.13/10
W
° C
° C
° C
° C
Nm/lb.in.
5
g
Features
? Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
? Low drain to tab capacitance(<30pF)
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ.
max.
Applications
? DC-DC converters
V DSS
V GS = 0 V, I D = 250 uA
200
V
? Battery chargers
? Switched-mode and resonant-mode
V GS(th)
V DS = V GS , I D = 4 mA
2.0
4.0
V
power supplies
? DC choppers
? AC motor control
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
Advantages
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = I T
T J = 25 ° C
T J = 125 ° C
25
1
28
m A
mA
m W
? Easy assembly
? Space savings
? High power density
Note 1
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98617A (7/00)
1-2
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